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| MITSUBISHI SEMICONDUCTOR TRIAC BCR08AS LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR08AS OUTLINE DRAWING Dimensions in mm 4.40.1 1.60.2 1.50.1 2.50.1 1 0.8 MIN 2 3 0.50.07 0.40.07 1.50.1 1.50.1 (Back side) 2 1 T1 TERMINAL 2 T2 TERMINAL 3 GATE TERMINAL 0.4 +0.03 -0.05 * * * * IT (RMS) ..................................................................... 0.8A VDRM ....................................................................... 600V IFGT !, IRGT !, IRGT # .............................................. 5mA IFGT # ..................................................................... 10mA 3 1 SOT-89 APPLICATION Hybrid IC, solid state relay, control of household equipment such as electric fan * washing machine, other general purpose control applications MAXIMUM RATINGS Symbol VDRM VDSM Parameter Repetitive peak off-state voltage 1 Non-repetitive peak off-state voltage 1 Voltage class 12 (marked "BF") 600 720 Unit V V 3.90.3 Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg -- Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Typical value Conditions Commercial frequency, sine full wave 360 conduction, Ta=40C 3 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ratings 0.8 8 0.26 1 0.1 6 1 -40 ~ +125 -40 ~ +125 48 Unit A A A2s W W V A C C mg 1. Gate open. Mar. 2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR08AS LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Limits Symbol IDRM VTM VFGT ! VRGT ! VRGT # VFGT # IFGT ! IRGT ! IRGT # IFGT # VGD Rth (j-a) (dv/dt)c Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltage 4 Parameter Repetitive peak off-state current On-state voltage ! Gate trigger voltage 2 @ # $ ! Gate trigger current 2 @ # $ Tj=125C, VD=1/2VDRM Junction to case 3 Tj=125C Test conditions Tj=125C, VDRM applied Tc=25C, ITM=1.2A, Instantaneous measurement Min. -- -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 1.0 2.0 2.0 2.0 2.0 2.0 5 5 5 10 -- 65 -- Unit mA V V V V V mA mA mA mA V C/ W V/s Tj=25C, VD=6V, RL=6, RG=330 -- -- -- -- Tj=25C, VD=6V, RL=6, RG=330 -- -- 0.1 -- 0.5 2. Measurement using the gate trigger characteristics measurement circuit. 3. Mounted on 25mm x 25mm x t0.7mm ceramic plate with solder. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Test conditions Commutating voltage and current waveforms (inductive load) 1. Junction temperature Tj=125C 2. Rate of decay of on-state commutating current (di/dt)c=-0.4A/ms 3. Peak off-state voltage VD=400V SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c (di/dt)c TIME TIME TIME VD PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS RATED SURGE ON-STATE CURRENT 10 SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) 101 7 5 4 3 2 Tj = 125C 100 7 5 4 3 2 10-1 0 1 2 8 6 4 Tj = 25C 2 0 100 3 4 5 2 3 4 5 7 101 2 3 4 5 7 102 ON-STATE VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) Mar. 2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR08AS LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE GATE CHARACTERISTICS 100 (%) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 102 7 5 4 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) TYPICAL EXAMPLE IFGT III IFGT I IRGT III IRGT I GATE VOLTAGE (V) 101 7 5 3 2 100 7 5 3 2 PGM = 1W PG(AV) = 0.1W VGT IGM = 1A IFGT I, IRGT I, IRGT III IFGT III VGD = 0.2V 10-1 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 GATE CURRENT (mA) GATE TRIGGER CURRENT (Tj = tC) GATE TRIGGER CURRENT (Tj = 25C) 102 7 5 3 2 VGM = 10V GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS TRANSIENT THERMAL IMPEDANCE (C/W) GATE TRIGGER VOLTAGE (Tj = tC) GATE TRIGGER VOLTAGE (Tj = 25C) 103 7 5 4 3 2 102 7 5 4 3 2 TYPICAL EXAMPLE 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) JUNCTION TO AMBIENT VFGT I VFGT III JUNCTION TO CASE VRGT I VRGT III 101 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) MAXIMUM ON-STATE POWER DISSIPATION ON-STATE POWER DISSIPATION (W) ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT CURVES APPLY REGARDLESS 140 OF CONDUCTION ANGLE NATURAL CONVECTION RESISTIVE, 120 INDUCTIVE 100 LOADS 80 60 40 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 RMS ON-STATE CURRENT (A) 160 2.0 CASE TEMPERATURE (C) 1.6 1.2 0.8 360 CONDUCTION RESISTIVE, INDUCTIVE LOADS 0.4 0 0 0.4 0.8 1.2 1.6 2.0 RMS ON-STATE CURRENT (A) Mar. 2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR08AS LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 105 7 TYPICAL EXAMPLE 5 3 2 104 7 5 3 2 103 7 5 3 2 102 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) 103 7 5 3 2 102 7 5 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) 100 (%) 100 (%) HOLDING CURRENT VS. JUNCTION TEMPERATURE TYPICAL EXAMPLE REPETITIVE PEAK OFF-STATE CURRENT (Tj = tC) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25C) HOLDING CURRENT (Tj = tC) HOLDING CURRENT (Tj = 25C) LACHING CURRENT VS. JUNCTION TEMPERATURE 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 100 (%) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100120 140 JUNCTION TEMPERATURE (C) DISTRIBUTION + T2 , G- TYPICAL EXAMPLE LACHING CURRENT (mA) + T2 , G+ TYPICAL - T2 , G- EXAMPLE - T2 , G+ 10-1 -40 0 40 80 120 160 JUNCTION TEMPERATURE (C) 100 (%) CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/s) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 140 TYPICAL EXAMPLE Tj = 125C BREAKOVER VOLTAGE (Tj = tC) BREAKOVER VOLTAGE (Tj = 25C) COMMUTATION CHARACTERISTICS 101 7 5 3 2 100 7 5 3 2 MINIMUM CHARACTERISTICS VALUE 2 3 TYPICAL EXAMPLE Tj = 125C IT = 1A = 500s VD = 200V f = 3Hz III QUADRANT BREAKOVER VOLTAGE (dv/dt = xV/s ) BREAKOVER VOLTAGE (dv/dt = 1V/s ) 120 100 80 60 40 20 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 RATE OF RISE OF OFF-STATE VOLTAGE (V/s) III QUADRANT I QUADRANT I QUADRANT 10-1 10-1 5 7 100 2 3 5 7 101 RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A/ms) Mar. 2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR08AS LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 103 7 5 4 3 2 100 (%) GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6 6 TYPICAL EXAMPLE GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 6V V A RG 6V V A RG 102 7 IRGT I IRGT III IFGT I 5 IFGT III 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 TEST PROCEDURE 1 6 TEST PROCEDURE 2 6 6V V A RG 6V V A RG GATE CURRENT PULSE WIDTH (s) TEST PROCEDURE 3 TEST PROCEDURE 4 Mar. 2002 |
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